Leakage studies in high-density dynamic MOS memory devices
- 1 April 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 14 (2) , 486-497
- https://doi.org/10.1109/jssc.1979.1051201
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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