A new experimental method to determine the saturation voltage of a small-geometry MOSFET

This publication has 10 references indexed in Scilit:

• An experimental method for the determination of the saturation point of a MOSFET
  IEEE Transactions on Electron Devices, 1984
• A new method to determine MOSFET channel length
  IEEE Electron Device Letters, 1980
• The effects of two-dimensional charge sharing on the above-threshold characteristics of short-channel IGFETS
  Solid-State Electronics, 1979
• VLSI limitations from drain-induced barrier lowering
  IEEE Transactions on Electron Devices, 1979
• Device characteristics of short-channel and narrow-width MOSFET's
  IEEE Transactions on Electron Devices, 1978
• A simple theory to predict the threshold voltage of short-channel IGFET's
  Solid-State Electronics, 1974
• An accurate large-signal MOS transistor model for use in computer-aided design
  IEEE Transactions on Electron Devices, 1972
• Drift velocity saturation in MOS transistors
  IEEE Transactions on Electron Devices, 1970
• Current/voltage characteristics, channel pinchoff and field dependence of carrier velocity in silicon insulated-gate field-effect transistors
  Electronics Letters, 1970
• Conductance of MOS transistors in saturation
  IEEE Transactions on Electron Devices, 1969