A numerical analysis of bulk-barrier diodes
- 30 April 1982
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 25 (4) , 317-324
- https://doi.org/10.1016/0038-1101(82)90141-1
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Simulation of semiconductor transport using coupled and decoupled solution techniquesSolid-State Electronics, 1980
- The Shockley-like equations for the carrier densities and the current flows in materials with a nonuniform compositionSolid-State Electronics, 1980
- A majority-carrier camel diodeApplied Physics Letters, 1979
- Law of the junction for degenerate material with position-dependent band gap and electron affinitySolid-State Electronics, 1979
- Temperature dependent threshold behavior of depletion mode MOSFETs: Characterization and simulationSolid-State Electronics, 1979
- Measurements of bandgap narrowing in Si bipolar transistorsSolid-State Electronics, 1976
- Transient 2-dimensional simulation of a submicrometre gate-length m.e.s.f.e.t.Electronics Letters, 1975
- An accurate numerical one-dimensional solution of the p-n junction under arbitrary transient conditionsSolid-State Electronics, 1968
- An accurate numerical steady-state one-dimensional solution of the P-N junctionSolid-State Electronics, 1968
- Theory of the Flow of Electrons and Holes in Germanium and Other SemiconductorsBell System Technical Journal, 1950