MOCVD Growth of GaAs1-xPx (x=0-1) and Fabrication of GaAs0.6P0.4 LED on Si Substrate
- 1 September 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (9R)
- https://doi.org/10.1143/jjap.25.1388
Abstract
Single-crystalline GaAs1-x P x (x=0-1) layers were grown on (100)2° off Si substrates by metal-organic chemical vapor deposition using GaP and superlattices as intermediate layers. A very smooth mirror-like surface was obtained in the range x=0-0.4. Light-emitting diodes emitting at 655 nm have been fabricated in the GaAs0.6P0.4 layer on a Si substrate.Keywords
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