Temperature characteristics of bipolar cascade lasers
- 10 July 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (2) , 172-174
- https://doi.org/10.1063/1.126914
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Epitaxially-stacked multiple-active-region 1.55μm lasers for increased differential efficiencyApplied Physics Letters, 1999
- Continuous-wave room temperature operation of bipolarcascade laserElectronics Letters, 1999
- CW operation of a diode cascade InGaAs quantum wellVCSELElectronics Letters, 1998
- Epitaxially stacked lasers with Esaki junctions: A bipolar cascade laserApplied Physics Letters, 1997
- High-power high-efficiency 0.98-μm wavelength InGaAs-(In)GaAs(P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxyIEEE Journal of Quantum Electronics, 1997
- Temperature dependence of light-current characteristics of 0.98-/spl mu/m Al-free strained-quantum-well lasersIEEE Photonics Technology Letters, 1994
- Low threshold 0.98 μm aluminium-free strained-quantum-well InGaAs/InGaAsP/InGaP lasersElectronics Letters, 1993
- 0.98 μm strained-layer GaInAs/GaInAsP/GaInP quantum well lasersElectronics Letters, 1992
- Integrated multilayer GaAs lasers separated by tunnel junctionsApplied Physics Letters, 1982