Integrated multilayer GaAs lasers separated by tunnel junctions
- 15 September 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (6) , 499-501
- https://doi.org/10.1063/1.93585
Abstract
An integrated multilayer laser consisting of three double heterostructure GaAs laser diodes connected in series by reversed biased p+n+ tunnel junctions have been grown by molecular beam epitaxy. The lasers operate at currents comparable to single double heterostructure lasers but at approximately three times the single laser voltage.Keywords
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