Activation and carrier mobility in high fluence B implanted germanium

High doping regimes of B implanted Ge have been accurately characterized combining Hall effect technique and nuclear reaction analysis. Preamorphized Ge was implanted with B at $35\mathrm{keV}$ (spanning the $0.25–25\times {10}^{20}\mathrm{B}∕{\mathrm{cm}}^3$ concentration range) and recrystallized by solid phase epitaxy at $360°\mathrm{C}$ . The Hall scattering factor and the maximum concentration of active B resulted $r_H=1.21$ and $\sim 5.7\times {10}^{20}\mathrm{B}∕{\mathrm{cm}}^3$ , respectively. The room-temperature carrier mobility was accurately measured, decreasing from $\sim 300\text{to}50{\mathrm{cm}}^2∕\mathrm{V}\mathrm{s}$ in the investigated dopant density, and a fitting empirical law is given. These results allow reliable evaluation for Ge application in future microelectronic devices.