Preamorphization implantation-assisted boron activation in bulk germanium and germanium-on-insulator
- 27 September 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 87 (14)
- https://doi.org/10.1063/1.2076440
Abstract
The effect of preamorphization implantation (PAI) on boron activation in germanium was studied. It was found that following PAI, significant dynamic annealing occurred during boron implantation in germanium. For small PAI energy which leads to a thin amorphous layer, recrystallization is completed via dynamic annealing during the boron implantation. As a result, a high-temperature postimplant anneal is required to activate the remaining interstitial boron and to annihilate implantation defects. For high PAI energy, while the thick amorphous layer did not recrystallize during the dynamic annealing, it requires a high-temperature anneal in order to completely recrystallize by solid phase epitaxial regrowth (SPER). The optimized PAI energy needs to be tailored such that the surface amorphous layer not only survives dynamic annealing during boron implantation, but also completes the SPER within the designed thermal budget. Full activation of boron can then be achieved without being limited by its solid solubility in germanium. An electrically active boron concentration as high as 4.7×1020∕cm3 was obtained after 400°C rapid thermal annealing. PAI causes a similar effect in GeOI substrates.Keywords
This publication has 10 references indexed in Scilit:
- Electrical activation in silicon-on-insulator after low energy boron implantationJournal of Applied Physics, 2004
- Energetics of transient enhanced diffusion of boron in Ge and SiGePhysical Review B, 2004
- Activation and diffusion studies of ion-implanted p and n dopants in germaniumApplied Physics Letters, 2003
- Photonic high-frequency capacitance-voltage characterization of interface states in metal-oxide-semiconductor capacitorsIEEE Transactions on Electron Devices, 2002
- Diffusion of ion-implanted boron in germaniumJournal of Applied Physics, 2001
- Structural modifications in amorphous Ge produced by ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2001
- Ion beam induced amorphous–crystalline phase transition in Si: Quantitative approachNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2000
- The Annealing Time and Temperature Dependence of Electrical Dopant Activation in High‐Dose BF 2 Ion Implanted SiliconJournal of the Electrochemical Society, 1994
- Effect of buried Si-SiO2 interfaces on oxidation and implant-enhanced dopant diffusion in thin silicon-on-insulator filmsJournal of Applied Physics, 1994
- Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+Journal of Applied Physics, 1979