Wafer-bonded bottom-emitting 850-nm VCSEL's on GaP substrates
- 1 August 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 11 (8) , 937-939
- https://doi.org/10.1109/68.775305
Abstract
Bottom-emitting 850-nm vertical-cavity surface-emitting lasers were fabricated using wafer bonding technology to replace the absorbing GaAs substrates with transparent GaP substrates. Ohmic-like p-type GaAs-GaP bonded interfaces were obtained with proper bonding condition. The devices with 4/spl times/4 /spl mu/m/sup 2/ current aperture exhibit 24% external quantum efficiency, and threshold current as low as 400 /spl mu/A. The threshold voltages range from 1.71 to 1.8 V for different aperture size devices.Keywords
This publication has 13 references indexed in Scilit:
- Hybrid integration of VCSELs to foundry fabricated smart pixelsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Aperture placement effects in oxide-defined vertical-cavity surface-emitting lasersIEEE Photonics Technology Letters, 1998
- Short wavelength bottom-emitting vertical cavitylasers fabricated using wafer bondingElectronics Letters, 1998
- Direct wafer bonding of III-V compound semiconductors for free-material and free-orientation integrationIEEE Journal of Quantum Electronics, 1997
- 57% wallplug efficiency oxide-confined 850 nm wavelengthGaAs VCSELsElectronics Letters, 1997
- Flip-chip bonded 0.85-μm bottom-emitting vertical-cavity laser array on an AlGaAs substrateIEEE Photonics Technology Letters, 1996
- Oxide-confined 850 nm vertical-cavity lasers formultimode-fibre data communicationsElectronics Letters, 1996
- Ultralow threshold current vertical-cavity surface-emittinglasersobtained with selective oxidationElectronics Letters, 1995
- Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integrationApplied Physics Letters, 1990
- Room-temperature continuous wave lasing characteristics of a GaAs vertical cavity surface-emitting laserApplied Physics Letters, 1989