Structural fingerprints in the reflectance anisotropy spectra ofsurfaces
- 15 January 1999
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 59 (3) , 2234-2239
- https://doi.org/10.1103/physrevb.59.2234
Abstract
The reflectance anisotropy has been calculated from first principles for a series of recently proposed structural models of the surface. The features of the calculated spectra are related to specific surface bonding configurations. We find a pronounced negative anisotropy around 1.7 eV linked to transitions between σ-like In-In bonding states and empty dangling bonds localized at the surface cations. The strength of that anisotropy is directly related to the number of In-In bonds at the surface. This explains the gradual change of the corresponding measured anisotropy in that energy region, depending on the growth conditions. Positive anisotropies at higher energies arise from transitions between P-P dimer related states and surface resonances. Additionally we find derivativelike features at the energy of the peak that depend only weakly on the surface structure and stoichiometry. In conjunction with the experimental data, our results indicate that the (2×4) reconstructed InP(001) surface features In-In bonds along [110] and P-P dimers parallel to respectively. The relative number of these bonds varies with the growth conditions.
Keywords
This publication has 51 references indexed in Scilit:
- Reflectance Anisotropy of GaAs(100): Theory and ExperimentPhysical Review Letters, 1998
- Theory of reflectance anisotropy of clean and hydrogenated (001) diamond surfacesPhysical Review B, 1997
- Atomic Structure of the Sb-Stabilized GaAs(100)-() SurfacePhysical Review Letters, 1996
- Optical Properties of Ordered As Layers on InP(110) SurfacesPhysical Review Letters, 1996
- Real-time analysis of III–V-semiconductor epitaxial growthApplied Surface Science, 1996
- Reflectance Difference Spectroscopy: Experiment and Theory for the Model System Si(001):As and Application to Si(001)Physical Review Letters, 1996
- Nonlinear excitation of capillary waves by the Marangoni motion induced with a modulated laser beamPhysical Review B, 1995
- Real-time optical diagnostics for epitaxial growthSurface Science, 1994
- Direct optical measurement of surface dielectric responses: Interrupted growth on (001) GaAsPhysical Review Letters, 1990
- Anisotropies in the Above—Band-Gap Optical Spectra of Cubic SemiconductorsPhysical Review Letters, 1985