Effects of localized interface defects caused by hot-carrier stress in n-channel MOSFETs at low temperature
- 1 September 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (9) , 479-481
- https://doi.org/10.1109/55.6951
Abstract
Hot-carrier stressing was carried out on 1- mu m n-type MOSFETs at 77 K with fixed drain voltage V/sub d/=5.5 V and gate voltage V/sub g/ varying from 1.5 to 6.5 V. It was found that the maximum transconductance degradation Delta G/sub m/ and threshold voltage shift Delta V/sub t/, do not occur at the same V/sub g/. As well, Delta K/sub t/ is very small for the V/sub g/<V/sub d/ stress regime, becomes significant at V/sub g/ approximately=V/sub d/, and then increases rapidly with increasing V/sub g/, whereas Delta G/sub m/ has its maximum maximum in the region of maximum substrate current. The behavior is explained by the localized nature of induced defects, which is also responsible for a distortion of the transconductance curves and even a slight temporary increase in the transconductance during stress.Keywords
This publication has 9 references indexed in Scilit:
- Two-dimensional modeling of locally damaged short-channel MOSFET's operating in the linear regionIEEE Transactions on Electron Devices, 1987
- Hot-electron-induced interface state generation in n-channel MOSFET's at 77 KIEEE Transactions on Electron Devices, 1987
- Analyzing hot-carrier effects on cold CMOS devicesIEEE Transactions on Electron Devices, 1987
- Performance and hot-carrier effects of small CRYO-CMOS devicesIEEE Transactions on Electron Devices, 1987
- Hot-electron and hole-emission effects in short n-channel MOSFET'sIEEE Transactions on Electron Devices, 1985
- Relationship between hot-electrons/Holes and degradation of p- and n-channel MOSFET'sIEEE Electron Device Letters, 1985
- Effects of hot-carrier trapping in n- and p-channel MOSFET'sIEEE Transactions on Electron Devices, 1983
- 1 µm MOSFET VLSI technology: Part IV—Hot-electron design constraintsIEEE Transactions on Electron Devices, 1979
- Thermal reemission of trapped electrons in SiO2Journal of Applied Physics, 1978