The Influence of Hydrogen Dilution and Substrate Temperature in Hot-Wire Deposition of Amorphous and Microcrystalline Silicon With Filament Temperatures Between 1900 And 2500 °C
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Low filament temperature deposition of a-Si:H by hot-wire chemical vapor depositionJournal of Applied Physics, 1995
- Fast Deposition of Polycrystalline Silicon Films by Hot-Wire CVDMRS Proceedings, 1995
- Polycrystalline silicon films obtained by hot-wire chemical vapour depositionApplied Physics A, 1994
- Change in crystalline morphologies of polycrystalline silicon films prepared by radio-frequency plasma-enhanced chemical vapor deposition using SiF4+H2 gas mixture at 350 °CApplied Physics Letters, 1994
- Deposition of a-Si:H with the hot-wire techniqueJournal of Non-Crystalline Solids, 1993
- Deposition of device quality, low H content amorphous siliconJournal of Applied Physics, 1991
- A reduction in the Staebler-Wronski effect observed in low H content a-Si:H films deposited by the hot wire techniqueAIP Conference Proceedings, 1991
- Production of high-quality amorphous silicon films by evaporative silane surface decompositionJournal of Applied Physics, 1988
- Catalytic Chemical Vapor Deposition (CTC–CVD) Method Producing High Quality Hydrogenated Amorphous SiliconJapanese Journal of Applied Physics, 1986
- a-Si : H produced by high-temperature thermal decomposition of silaneJournal of Applied Physics, 1979