p-Type doping of SiC by high dose Al implantation—problems and progress
- 1 December 2001
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 184 (1-4) , 307-316
- https://doi.org/10.1016/s0169-4332(01)00510-4
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Phase formation due to high dose aluminum implantation into silicon carbideJournal of Applied Physics, 2000
- Doping in cubic silicon–carbideApplied Physics Letters, 1999
- A comparative study of C plus Al coimplantation and Al implantation in 4Hand 6H-SiCIEEE Transactions on Electron Devices, 1999
- Doping of SiC by Implantation of Boron and AluminumPhysica Status Solidi (a), 1997
- Defect characterization in high temperature implanted 6HSiC using TEMNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1997
- Charge transport in silicon carbide: Atomic and microscopic effectsJournal of Applied Physics, 1996
- Al, Al/C and Al/Si implantations in 6H-SiCJournal of Electronic Materials, 1996
- SiC devices: physics and numerical simulationIEEE Transactions on Electron Devices, 1994
- Conductivity Anisotropy in Epitaxial 6H and 4H SicMRS Proceedings, 1994
- Doping Peculiarities of SiC Epitaxial Layers Grown by the Sublimation “Sandwich Method”Springer Proceedings in Physics, 1992