Boron ion implantation in p-type Hg0.8Cd0.2Te
- 1 December 1990
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (11) , 5564-5566
- https://doi.org/10.1063/1.347016
Abstract
Differential Hall measurements at 77 K were done on 150‐keV boron implanted p‐type mercury‐cadmium‐telluride (HgCdTe). n+ layers formed as a result of implantation with various doses were very sharp and thicknesses of the n+ layers were found to depend on boron dose. The sheet carrier concentration tends to saturate above the dose 1×1013 cm−2.This publication has 14 references indexed in Scilit:
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