Damage dependent electrical activation of boron implanted silicon
- 1 April 1974
- journal article
- research article
- Published by Springer Nature in Applied Physics A
- Vol. 3 (4) , 321-324
- https://doi.org/10.1007/bf00887282
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Acceptor profiles obtained by diffusive redistribution of implanted impurities during annealingApplied Physics Letters, 1973
- A sample holder for measurement and anodic oxidation of ion implanted siliconJournal of Physics E: Scientific Instruments, 1973
- Boron Doping Profiles and Annealing Behavior of Amorphous Implanted Silicon LayersPublished by Springer Nature ,1973
- DEPTH DISTRIBUTION OF DIVACANCIES IN 400-keV O+ ION-IMPLANTED SILICONApplied Physics Letters, 1970
- Solid Solubility and Diffusion Coefficients of Boron in SiliconJournal of the Electrochemical Society, 1969