Single-event dynamics of high-performance HBTs and GaAs MESFETs

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Abstract
Picosecond charge-collection transients measured for GaAs/AlGaAs HBTs following 3.0 MeV alpha-particle and 620 nm picosecond laser excitation reveal charge-collection efficiencies up to twenty-eight times smaller than for GaAs MESFETs, with similar to 90% of the charge collected within 75 ps of the ionizing event. The small charge-collection efficiency of the HBTs is a consequence of the ultrafast charge-collection dynamics in these devices. We show that picosecond laser excitation reproduces nicely the ion-induced transients, providing a valuable tool for the investigation of charge-collection and SEU phenomena in these devices.