Properties of inversion layers for MIS/IL solar cells studied on low-temperature-processed MNOS transistors
- 31 October 1983
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 26 (10) , 993-997
- https://doi.org/10.1016/0038-1101(83)90075-8
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- High efficiency inversion layer solar cells on polycrystalline silicon by the application of silicon nitrideIEEE Transactions on Electron Devices, 1981
- Silicon nitride for the improvement of silicon inversion layer solar cellsSolid-State Electronics, 1981
- Plasma Si nitride—A promising dielectric to achieve high-quality silicon MIS/IL solar cellsJournal of Applied Physics, 1981
- Electron Mobility in Inversion and Accumulation Layers on Thermally Oxidized Silicon SurfacesIEEE Journal of Solid-State Circuits, 1980
- Detailed modeling of inversion-layer solar cellsIEEE Transactions on Electron Devices, 1980
- Mechanical Stress and Electrical Properties of MNOS Devices as a Function of the Nitride Deposition TemperatureJournal of the Electrochemical Society, 1978
- New TiOx-MIS and Si02-MIS silicon solar cellsIEEE Transactions on Electron Devices, 1978
- Silicon solar cells using natural inversion layers found in thermally-oxidized p-siliconSolid-State Electronics, 1977
- The influence of dielectric charge on the hole field-effect mobility in silicon inversion layersPhysics Letters A, 1972
- Charge Transport and Storage in Metal-Nitride-Oxide-Silicon (MNOS) StructuresJournal of Applied Physics, 1969