Temperature behaviour of MNOS structures
- 1 January 1977
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 59 (6) , 481-482
- https://doi.org/10.1016/0375-9601(77)90663-6
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- High field conduction processes in silicon nitride films in the presence of charge trappingThin Solid Films, 1976
- Low-field transient behavior of MNOS devicesJournal of Applied Physics, 1976
- Silicon nitride trap properties as revealed by charge−centroid measurements on MNOS devicesApplied Physics Letters, 1975
- Interface instability of r.f. sputtered silicon nitride films on siliconThin Solid Films, 1974
- Effects of bulk trapping on the memory characteristics of thick-oxide MNOS variable-threshold capacitorsSolid-State Electronics, 1974
- Properties of MNOS structuresIEEE Transactions on Electron Devices, 1972
- Trapping Levels in the Silicon—Silicon Nitride SystemPhysica Status Solidi (b), 1969
- The conduction processes in silicon nitrideCanadian Journal of Physics, 1968
- The Poole-Frenkel Effect with Compensation PresentJournal of Applied Physics, 1968
- DENSITY OF SiO2–Si INTERFACE STATESApplied Physics Letters, 1966