POST ILLUMINATION ANNEALING OF DEFECTS IN LASER-PROCESSED SILICON

This publication has 11 references indexed in Scilit:

• Passivation of grain boundaries in polycrystalline silicon
  Applied Physics Letters, 1979
• Periodic regrowth phenomena produced by laser annealing of ion-implanted silicon
  Applied Physics Letters, 1978
• Hydrogenation and dehydrogenation of amorphous and crystalline silicon
  Applied Physics Letters, 1978
• Laser annealing of boron-implanted silicon
  Applied Physics Letters, 1978
• Capacitance Transient Spectroscopy
  Annual Review of Materials Science, 1977
• Substitutional doping of amorphous silicon
  Solid State Communications, 1975
• Investigation of defects and striations in as-grown Si crystals by SEM using Schottky diodes
  Applied Physics Letters, 1975
• Thermally Stimulated Capacitance (TSCAP) in p-n Junctions
  Applied Physics Letters, 1972
• Impurity centers in PN junctions determined from shifts in the thermally stimulated current and capacitance response with heating rate
  Solid-State Electronics, 1972
• The Preparation and Properties of Amorphous Silicon
  Journal of the Electrochemical Society, 1969