Abrupt Ga1−xAlxAs-GaAs quantum-well heterostructures grown by metalorganic chemical vapor deposition

Abstract
Multiple‐quantum‐well Ga1−xAlxAs‐GaAs heterostructures grown by metalorganic chemical vapor deposition have been analyzed by Auger electron spectroscopy combined with simultaneous argon‐ion sputter etching. The chemical‐interface widths of the Ga0.45Al0.55As‐GaAs heterojunctions are determined to be ≲17 Å. In addition, no Al is detected in the GaAs quantum wells.