A channeled ion energy loss study of the surfactant-mediated growth of Ge on Si(100)
- 10 March 1996
- journal article
- Published by Elsevier in Surface Science
- Vol. 348 (3) , L75-L81
- https://doi.org/10.1016/0039-6028(95)01100-5
Abstract
No abstract availableKeywords
This publication has 34 references indexed in Scilit:
- Asymmetric Sb dimers on the 1 ML Ge-terminated Si(100) surfaceSurface Science, 1994
- Surfactant-mediated growth of germanium on silicon (001) with submonolayer coverage of Sb and TeJournal of Applied Physics, 1993
- Growth morphology and the equilibrium shape: The role of ‘‘surfactants’’ in Ge/Si island formationPhysical Review Letters, 1993
- Effect of a surfactant on the growth of Si/Ge heterostructuresThin Solid Films, 1992
- Microscopic study of the surfactant-assisted Si, Ge epitaxial growthApplied Physics Letters, 1992
- Two-dimensional lattice-mismatched heteroepitaxy of germanium on silicon beyond the critical thickness by introducing a surfactantApplied Physics Letters, 1992
- Low temperature pseudomorphic growth of Ge on Si(100)-(2 × 1)Journal of Crystal Growth, 1991
- Influence of surfactants in Ge and Si epitaxy on Si(001)Physical Review B, 1990
- Surfactants in epitaxial growthPhysical Review Letters, 1989
- Lattice-Location Experiment of the Ni-Si Interface by Thin-Crystal Channeling of Helium IonsPhysical Review Letters, 1981