Surface localization of the photochemical vapor deposition of SiO2 on InP at low pressure and room temperature

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Abstract
The first stages of the chemical vapor deposition of SiO2 on chemically polished InP substrates, promoted by UV illumination at room temperature and low (≊0.01 Torr) precursor pressure, have been studied in an ultrahigh vacuum environment. Chemical species deposited are found to be quite similar to those deposited by the thermally promoted process. Both Si and O atom depositions need UV illumination. The reaction rates observed in separate or mixed gas exposures indicate that surface‐located mechanisms play a major part in the buildup of the SiO2/InP interface at low precursor pressure, thus opening perspectives for localized insulator growth under the UV beam.