Investigation of the bulk and surface electronic properties of HgCdTe epitaxial layers using photoelectromagnetic, Hall, and photoconductivity measurements
- 15 September 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (6) , 2312-2321
- https://doi.org/10.1063/1.351573
Abstract
No abstract availableThis publication has 27 references indexed in Scilit:
- Minority-carrier lifetime in p-type (111)B HgCdTe grown by molecular-beam epitaxyJournal of Applied Physics, 1990
- Transient and steady-state excess carrier lifetimes in p-type HgCdTeApplied Physics Letters, 1989
- Lifetime and carrier-concentration profile of B+-implanted p-type HgCdTeJournal of Applied Physics, 1986
- Minority carrier lifetime in LPE Hg1−x Cdx TeJournal of Vacuum Science & Technology A, 1983
- Performance of PV HgCdTe arrays for 1-14-µm applicationsIEEE Transactions on Electron Devices, 1982
- Electrical properties of infrared photovoltaic CdxHg1−xTe detectorsInfrared Physics, 1981
- Deep level studies of Hg1−xCdxTe. II: Correlation with photodiode performanceJournal of Applied Physics, 1981
- Recombination in cadmium mercury telluride photodetectorsSolid-State Electronics, 1978
- Tunnel current limitations of narrow bandgap infrared charge coupled devices∗Infrared Physics, 1977
- Detectivity limits for diffused junction PbSnTe detectorsInfrared Physics, 1975