Charge retention of scaled SONOS nonvolatile memory devices at elevated temperatures
- 1 June 2000
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 44 (6) , 949-958
- https://doi.org/10.1016/s0038-1101(00)00012-5
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- Charge retention in scaled SONOS nonvolatile semiconductor memory devices—Modeling and characterizationSolid-State Electronics, 1993
- Charge retention of MNOS devices limited by Frenkel-Poole detrappingApplied Physics Letters, 1978
- Endurance and memory decay of MNOS devicesJournal of Applied Physics, 1976
- Discharge of MNOS structures at elevated temperaturesSolid-State Electronics, 1976
- Electrical and Irradiation Performance of MNOS ArraysJapanese Journal of Applied Physics, 1974
- Trap-assisted charge injection in MNOS structuresJournal of Applied Physics, 1973
- Discharge of MNOS structuresSolid-State Electronics, 1973
- Characterization of thin-oxide MNOS memory transistorsIEEE Transactions on Electron Devices, 1972
- Degradation of MNOS Memory Transistor Characteristics and Failure Mechanism Model8th Reliability Physics Symposium, 1972
- The variable threshold transistor, a new electrically-alterable, non-destructive read-only storage devicePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1967