Silicon Power Field Controlled Devices and Integrated Circuits

This publication has 159 references indexed in Scilit:

• Carrier density dependence of Auger recombination
  Solid-State Electronics, 1978
• Measurement of Auger recombination in silicon by laser excitation
  Solid-State Electronics, 1978
• Platinum as a lifetime-control deep impurity in silicon
  Journal of Applied Physics, 1975
• Electron mobility empirically related to the phosphorus concentration in silicon
  Solid-State Electronics, 1975
• Die rekombination in thyristoren und gleichrichtern aus silizium: Ihr einfluss auf die durchlasskennlinie und das freiwerdezeitverhalten
  Solid-State Electronics, 1975
• Transport equations in heavily doped silicon, and the current gain of a bipolar transistor
  Solid-State Electronics, 1973
• The forward characteristic of silicon power rectifiers at high current densities
  Solid-State Electronics, 1968
• Stabilization of MOS devices
  Solid-State Electronics, 1967
• SU3Symmetry and the Existence of a Ninth Vector Meson
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• Physical phenomenon responsible for saturation current in field effect devices
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