Electrical properties of InSb metal/insulator/semiconductor diodes prepared by photochemical vapour deposition
- 1 August 1987
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 151 (2) , 145-152
- https://doi.org/10.1016/0040-6090(87)90228-8
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Evaluation of InSb MOS Structure with Thin Anodic OxideJapanese Journal of Applied Physics, 1984
- Formation of Very Thin Anodic Oxide of InSbJapanese Journal of Applied Physics, 1983
- Plasma-enhanced chemically vapour-deposited silicon dioxide for metal/oxide/semiconductor structures on InSbThin Solid Films, 1982
- C/V measurements of m.i.s. structures on n -InSb formed by room temperature reactive deposition of Si 3 N 4Electronics Letters, 1980
- Films from the Low Temperature Oxidation of SilaneJournal of the Electrochemical Society, 1979
- Characterization of improved InSb interfacesJournal of Vacuum Science and Technology, 1979
- Composition, Chemical Bonding, and Contamination of Low Temperature SiO x N y Insulating FilmsJournal of the Electrochemical Society, 1978
- Interface state density and oxide charge measurements on the metal–anodic-oxide-InSb systemJournal of Applied Physics, 1976
- Surface Study of Anodized Indium AntimonideJournal of Applied Physics, 1970
- SURFACE INVERSION AND ACCUMULATION OF ANODIZED InSbApplied Physics Letters, 1965