Mis capacitors on BaF2/PbSe layers and epitaxial Si/BaF2/PBSE structures for IR detection
- 28 February 1985
- journal article
- Published by Elsevier in Infrared Physics
- Vol. 25 (1-2) , 333-336
- https://doi.org/10.1016/0020-0891(85)90102-2
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- GaAs/(Ca,Sr)F2/(001) GaAs lattice-matched structures grown by molecular beam epitaxyApplied Physics Letters, 1984
- Growth of single crystal SrF2(001)/GaAs(001) structures by molecular beam epitaxyApplied Physics Letters, 1984
- Analysis of epitaxial fluoride-semiconductor interfacesApplied Physics Letters, 1983
- Heteroepitaxial Growth of Group-IIa-Fluoride Films on Si SubstratesJapanese Journal of Applied Physics, 1983
- Epitaxial InP/fluoride/InP(001) double heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1983
- MBE-grown fluoride films: A new class of epitaxial dielectricsJournal of Vacuum Science and Technology, 1981
- Source-Coupled HgCdTe Staring Hybrid Focal Planes For Tactical ApplicationsPublished by SPIE-Intl Soc Optical Eng ,1981
- Epitaxial Thin Film IV-VI Detectors: Device Performance And Basic Material PropertiesPublished by SPIE-Intl Soc Optical Eng ,1981
- Fabrication and electrical properties of epitaxial PbTe metal-insulator-semiconductor structuresJournal of Applied Physics, 1979
- PbS MIS devices for charge-coupled infrared imaging applicationsApplied Physics Letters, 1975