Saturated defect densities of hydrogenated amorphous silicon grown by hot-wire chemical vapor deposition at rates up to 150 Å/s

This publication has 15 references indexed in Scilit:

• Structural changes ina−Si:Hfilm crystallinity with high H dilution
  Physical Review B, 2000
• Hydrogenated Amorphous Silicon Grown by Hot-Wire CVD at Deposition Rates up to 1 µm/minute
  MRS Proceedings, 2000
• Study of the Amorphous-to-Microcrystalline Transition during Silicon Film Growth at Increased Rates: Extensions of the Evolutionary Phase Diagram
  MRS Proceedings, 2000
• Low Hydrogen Content, High Quality Hydrogenated Amorphous Silicon Grown by Hot-Wire CVD
  MRS Proceedings, 1999
• Preparation of a-Si:H and a-SiGe:H I-Layers for Nip Solar Cells at High Deposition Rates Using a Very High Frequency Technique
  MRS Proceedings, 1998
• High deposition rate amorphous silicon-based multijunction solar cell
  Applied Physics Letters, 1995
• Effect of Light Soaking on Hot Wire Deposited a-Si:H Films
  MRS Proceedings, 1995
• Effect of carbon impurities on the density of states and the stability of hydrogenated amorphous silicon
  Physical Review B, 1994
• Light Induced Defects in a-Si:H, Temperature Dependence of their Creation and Anneal and their effect on Photocarrier Lifetime
  MRS Proceedings, 1994
• Drive-level capacitance profiling: Its application to determining gap state densities in hydrogenated amorphous silicon films
  Applied Physics Letters, 1985