Study of the interdiffusion of GaAs-AlGaAs interfaces during rapid thermal annealing of ion-implanted structures
- 15 July 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (2) , 545-551
- https://doi.org/10.1063/1.343571
Abstract
The phenomenon of transient-enhanced interdiffusion of GaAs-AlGaAs interfaces during rapid thermal annealing of ion-implanted heterostructures is studied. It is shown that the important properties that influence the degree of interdiffusion are the temperature, the concentration of excess vacancies, and the ability of the vacancies to diffuse freely. A model is presented to explain these observations; it is based on the solution of coupled diffusion equations involving excess vacancy and Al distributions following ion implantation. Both initial distributions are obtained from the solution of a three-dimensional Monte Carlo simulation of ion implantation into a heterostructure sample. The model is found to be in excellent agreement with several sets of experiments. More specifically, it is shown to be valid for as-implanted vacancy concentrations below 6×1019 cm−3.This publication has 24 references indexed in Scilit:
- Mechanism for ion-induced mixing of GaAs-AlGaAs interfaces by rapid thermal annealingApplied Physics Letters, 1988
- Monolithic waveguide coupled cavity lasers and modulators fabricated by impurity induced disorderingJournal of Lightwave Technology, 1988
- Aluminum ion-implantation enhanced intermixing of GaAs-AlGaAs quantum-well structuresJournal of Applied Physics, 1988
- Layer interdiffusion in Se-doped AlxGa1−xAs-GaAs superlatticesApplied Physics Letters, 1987
- Kinetics of silicon-induced mixing of AlAs-GaAs superlatticesApplied Physics Letters, 1987
- Effect of rapid thermal annealing for the compositional disordering of Si-implanted AlGaAs/GaAs superlatticesApplied Physics Letters, 1987
- Three-dimensional distributions of ion range and damage including recoil transportNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Kinetics of implantation enhanced interdiffusion of Ga and Al at GaAs-GaxAl1−xAs interfacesApplied Physics Letters, 1986
- Stripe-geometry AlGaAs-GaAs quantum-well heterostructure lasers defined by impurity-induced layer disorderingApplied Physics Letters, 1984
- Intermixing of an AlAs-GaAs superlattice by Zn diffusionJournal of Applied Physics, 1982