Tertiarybutylarsine for Metalorganic Chemical Vapor Deposition Growth of High Purity, High Uniformity Films
- 1 January 1997
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 26 (1) , 37-42
- https://doi.org/10.1007/s11664-997-0131-7
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Transport measurements and donor spectra of very high purity GaAs grown using tertiarybutylarsine and triethylgalliumJournal of Applied Physics, 1994
- Strained GaInAsP single-quantum-well lasers grown with tertiarybutylarsine and tertiarybutylphosphineApplied Physics Letters, 1993
- MOVPE growth of InGaAsP using TBA and TBP with extremely low V/III ratioJournal of Crystal Growth, 1992
- Use of tertiarybutylarsine in the fabrication of GaAs/AlGaAs quantum wells and quantum well lasersApplied Physics Letters, 1990
- Metalorganic vapor phase epitaxial growth of high quality InGaAs on InP using tertiarybutylarsineApplied Physics Letters, 1990
- The growth of GaAs, AlGaAs, and selectively doped AlGaAs/GaAs heterostructures by metalorganic vapor phase epitaxy using tertiarybutylarsineJournal of Applied Physics, 1990
- High quality long-wavelength lasers grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsineApplied Physics Letters, 1990
- OMVPE growth of In0.53Ga0.47As on InP using tertiarybutylarsineJournal of Electronic Materials, 1990
- GaAs p-i-n photodiodes made by metalorganic chemical vapor deposition using tertiarybutylarsine and arsineApplied Physics Letters, 1989
- Metalorganic chemical vapor deposition of high-purity GaAs using tertiarybutylarsineApplied Physics Letters, 1989