New method of light-induced deposition of metal films on insulator-on-semiconductor substrates
- 26 January 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (4) , 215-217
- https://doi.org/10.1063/1.97665
Abstract
We show in this work that the internal photoemission at the semiconductor-insulator interface in the semiconductor-insulator-electrolyte system can be used to initiate localized chemical reactions at the insulator-electrolyte interface. Using this concept, successful depositions of Cu and Ni films have been obtained on oxidized Si wafers. We have also found that the activation of the SiO2 surface with Pd atoms results in an efficient electron transfer at the SiO2-electrolyte interface and improves the adhesion of the deposited metal.Keywords
This publication has 12 references indexed in Scilit:
- The dispersion and instability of the work function difference in MOS structuresPhysica B+C, 1985
- Photochemical generation and deposition of copper from a gas phase precursorApplied Physics Letters, 1985
- An improved approach to electroless copper deposition on non-conducting substratesSolid-State Electronics, 1984
- Laser-induced metal deposition on InPJournal of Applied Physics, 1982
- Photoelectrochemical Deposition of Metal Patterns on SemiconductorsMRS Proceedings, 1982
- Laser photodeposition of refractory metalsApplied Physics Letters, 1981
- Laser photodeposition of metal films with microscopic featuresApplied Physics Letters, 1979
- Photoinjection Studies of Charge Distributions in Oxides of MOS StructuresJournal of Applied Physics, 1971
- The Nucleation, Growth, and Structure of Electroless Copper DepositsJournal of the Electrochemical Society, 1970
- Photoemission of Electrons from Silicon into Silicon DioxidePhysical Review B, 1965