Diffusion length studies in silicon by the surface photovoltage method
- 31 May 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (5) , 835-842
- https://doi.org/10.1016/0038-1101(88)90036-6
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Absorption coefficient of Si in the wavelength region between 0.80–1.16 μmJournal of Applied Physics, 1987
- Separation of surface and bulk minority-carrier lifetimes in siliconReview of Scientific Instruments, 1974
- Application of Microwave Reflection Technique to the Measurement of Transient and Quiescent Electrical Conductivity of SiliconReview of Scientific Instruments, 1969
- Simple Contactless Method for Measuring Decay Time of Photoconductivity in SiliconReview of Scientific Instruments, 1967
- An efficient flash X-ray for minority carrier lifetime measurements and other research purposesProceedings of the IEEE, 1965
- Measurement of Short Carrier LifetimesReview of Scientific Instruments, 1956
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955
- Measurement of Carrier Lifetimes in Germanium and SiliconJournal of Applied Physics, 1955
- Trapping of Minority Carriers in Silicon. I.-Type SiliconPhysical Review B, 1955
- The Mobility and Life of Injected Holes and Electrons in GermaniumPhysical Review B, 1951