Hydrogenation and the density of defect states in amorphous silicon
- 1 February 1979
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 32 (1-3) , 431-435
- https://doi.org/10.1016/0022-3093(79)90087-5
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Hydrogenation of evaporated amorphous silicon films by plasma treatmentApplied Physics Letters, 1978
- Doped amorphous semiconductorsAdvances in Physics, 1977
- Quantitative analysis of hydrogen in glow discharge amorphous siliconApplied Physics Letters, 1977
- Doping, Schottky barrier and pn junction formation in amorphous germanium and silicon by rf sputteringSolid State Communications, 1976
- Variable-range hoppingPhysica Status Solidi (a), 1976
- Temperature and thickness dependence of low temperature transport in amorphous silicon thin films: A comparison to amorphous germaniumSolid State Communications, 1975
- On the measurement of the conductivity density of states of evaporated amorphous silicon filmsPhysica Status Solidi (b), 1975
- EPR Studies in Neutron-Irradiated Silicon: A Negative Charge State of a Nonplanar Five-Vacancy Cluster ()Physical Review B, 1973
- Electrical conduction in evaporated amorphous silicon filmsJournal of Non-Crystalline Solids, 1972
- Conduction in non-crystalline materialsPhilosophical Magazine, 1969