Onset of blistering in hydrogen-implanted silicon
- 15 February 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (7) , 982-984
- https://doi.org/10.1063/1.123430
Abstract
The onset of surface blistering in hydrogen-implanted single crystalline silicon was studied. A combination of atomic force microscopy and optical measurements shows that hydrogen-containing platelets grow laterally below silicon surface until they suddenly pop up as surface blisters due to the internal hydrogen pressure after a critical size has been reached. Experimentally and theoretically, the critical size of the onset blisters was found to increase with increasing implantation depth or top layer thickness.Keywords
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