Long-wavelength InP-based quantum-dash lasers
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- 7 August 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 14 (6) , 735-737
- https://doi.org/10.1109/lpt.2002.1003076
Abstract
Self-assembled InAs quantum-dash (QD) lasers with emission wavelengths between 1.54 and 1.78 /spl mu/m based on the AlGaInAs-AlInAs-InP material system were grown by gas source molecular beam epitaxy. Threshold current densities below 1 kA/cm/sup 2/ were achieved for 1-mm-long mirror coated broad area lasers with a stack of four QD layers. The devices can be operated up to 80/spl deg/C in pulsed mode and show a high T/sub 0/ value of 84 K up to 35/spl deg/C. In comparison to quantum-well lasers a much lower temperature sensitivity of the emission wavelength was achieved. The temperature shift of /spl Delta//spl lambda///spl Delta/T = 0.12 nm/K is as low as that caused by the refractive index change.Keywords
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