Passivation of GaAs FET's with PECVD silicon nitride films of different stress states
- 1 September 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (9) , 1412-1418
- https://doi.org/10.1109/16.2573
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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