Effect of thin GaAs interface layer on InAs quantum dots grown on InGaAs/InP using metalorganic vapor phase epitaxy
- 1 October 2003
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 257 (3-4) , 225-230
- https://doi.org/10.1016/s0022-0248(03)01456-8
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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