Aging studies of evaporated ZnS:Mn alternating-current thin-film electroluminescent devices
- 15 April 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (8) , 4040-4048
- https://doi.org/10.1063/1.350828
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Possible degradation mechanism in ZnS:Mn alternating current thin-film electroluminescent displayApplied Physics Letters, 1991
- Capacitance-voltage characteristics of alternating-current thin-film electroluminescent devicesApplied Physics Letters, 1990
- Charge transfer in ZnS-type electroluminescenceJournal of Applied Physics, 1989
- Time and temperature dependence of instability mechanisms in amorphous silicon thin-film transistorsApplied Physics Letters, 1989
- Phosphorous Vacancy Nearest Neighbor Hopping Induced Instabilities in InP Capacitors: I . ExperimentalJournal of the Electrochemical Society, 1988
- Transferred Charge in the Active Layer and EL Device Characteristics of TFEL CellsJapanese Journal of Applied Physics, 1987
- Efficiency and Saturation in AC Thin Film EL StructuresPhysica Status Solidi (a), 1984
- Mechanisms of the negative-resistance characteristics in AC thin-film electroluminescent devicesIEEE Transactions on Electron Devices, 1983
- Low-threshold-voltage thin-film electroluminescent devicesIEEE Transactions on Electron Devices, 1981
- Trapping centres in sputtered SiO2 filmsThin Solid Films, 1979