Fast radiative processing of platinum silicide

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Abstract
High-intensity quartz-halogen tungsten lamps were used to form platinum silicide films. Platinum films of 42 and 52 nm were evaporated on single-crystal silicon and subsequently processed in a roughing vacuum from 5 up to 20 sec. The electrical characteristics and the microstructure of the silicide films were studied by four-point probe measurements, x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy. The silicide formation started within the first few seconds, and the reaction was essentially completed after 10 sec. The dominant phase was PtSi, while only a small amount of Pt2Si was detected in the 5- and 10-sec processed samples. The presence of oxygen and carbon in the film and processing ambient did not prevent the rapid silicide formation, although it gave rise to a surface layer composed of silicon oxide and other contaminants.

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