Improved higfet using Ti/Pt/Au ohmic contacts to beryllium implanted GaAsSb
- 29 February 1996
- journal article
- review article
- Published by Elsevier in Solid-State Electronics
- Vol. 39 (2) , 179-191
- https://doi.org/10.1016/0038-1101(95)00154-9
Abstract
No abstract availableKeywords
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