Correlation between Si-H2 Bond Density and Electron Drift Mobility in a-Si:H Films Prepared by Photochemical Vapor Deposition
- 1 October 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (10A) , L1803
- https://doi.org/10.1143/jjap.27.l1803
Abstract
The correlation between Si-H2 bond density and electron drift mobility in a-Si:H films has been investigated by using the dependence of the film properties on the silane gas pressure in mercury-sensitized photochemical vapor deposition. It was found that the electron drift mobility decreased with increasing the Si-H2 bond density, when the hydrogen contents were about the same amount.Keywords
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