Mössbauer study of the disorder in crystalline and amorphous Ge implanted with 125mTe ions
- 4 January 1982
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 87 (4) , 193-195
- https://doi.org/10.1016/0375-9601(82)90110-4
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- DPAC measurements on129mTeSiHyperfine Interactions, 1981
- Quadrupole interaction of125Te and129I in Te implanted semiconductorsHyperfine Interactions, 1981
- Radiation defects in ion-implanted silicon. II. Mössbauer spectroscopy ofdefect structures from implantations of radioactive telluriumPhysical Review B, 1980
- Excitations thermiques propagatives dans une couche de fluide stratifiéeJournal de Physique, 1980
- Laser and thermal annealing of Te-implanted siliconPhysics Letters A, 1979
- Local order as determined by electronic and vibrational spectroscopy: Amorphous semiconductorsJournal of Non-Crystalline Solids, 1978
- On the Existence of a Quadrupole Interaction at57Fe Implanted in Si and GePhysica Status Solidi (b), 1978
- Lattice location of Te in laser-annealed Te-implanted siliconJournal of Applied Physics, 1978
- Mössbauer Studies of ImplantedIons in Semiconductors and Alkali HalidesPhysical Review B, 1973
- Threefold coordinated model structure of amorphous GeS, GeSe and GeTeJournal of Non-Crystalline Solids, 1973