Selectively dry-etched n+-GaAs/AlGaAs/n-InGaAs doped-channel FETs by using a CHF3+BCl3 plasma
- 1 October 1998
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 42 (10) , 1793-1797
- https://doi.org/10.1016/s0038-1101(98)00147-6
Abstract
No abstract availableKeywords
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