Amorphization and regrowth in Si/CoSi2/Si heterostructures
- 1 December 1990
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (11) , 5641-5647
- https://doi.org/10.1063/1.346977
Abstract
Reduction of the defect density in the Si overlayer of Si/CoSi2/Si heterostructures fabricated by mesotaxy has been achieved by selective amorphization and regrowth of the Si. Layer‐by‐layer regrowth of the silicide with an activation energy of 1.14 eV has also been clearly shown.This publication has 14 references indexed in Scilit:
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