Photoconductivity of Neutron-Irradiated Gallium Arsenide
- 1 October 1970
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (11) , 4665-4668
- https://doi.org/10.1063/1.1658513
Abstract
Photoconductivity spectra taken on fast‐neutron‐irradiated samples of GaAs show a structure which is interpreted as being due to transitions between energy levels and either the valence or the conduction band. Levels lie at approximately 0.2‐ and 0.7‐eV above the valence band and 0.5‐eV below the conduction band. Slow‐neutron irradiation has been employed to compensate the acceptor impurity in p‐type GaAs. A level at Ev+0.7 eV is detected in the high‐resistivity material thus obtained. It is concluded that such level is associated with a defect that is present in GaAs before irradiation in an inactive form.This publication has 10 references indexed in Scilit:
- Effects of Neutron Irradiation on the Optical Properties of Thin Films and Bulk GaAs and GaPJournal of Applied Physics, 1970
- Photoconductivity of Chromium-Doped Gallium ArsenideJournal of Applied Physics, 1967
- Anelasticity Due to Intrinsic Defects in GaAsJournal of Applied Physics, 1966
- Behavior of lattice defects in GaAsJournal of Physics and Chemistry of Solids, 1964
- The Preparation of Semi-Insulating Gallium Arsenide by Chromium DopingJournal of the Electrochemical Society, 1964
- Radiation Effects in GaAsJournal of Applied Physics, 1963
- Neutron-induced effects in semiconductorsThe International Journal of Applied Radiation and Isotopes, 1963
- Preparation and characterization of high resistivity GaAsJournal of Physics and Chemistry of Solids, 1962
- Properties of Semi-Insulating GaAsJournal of Applied Physics, 1961
- Photoelectronic Analysis of High Resistivity Crystals: (a) GaAs, (b) Sb2S3Journal of Applied Physics, 1960