Growth and doping properties of AlGaAs/GaAs/InGaAs structures on nonplanar substrates for applications to low threshold lasers
- 2 December 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 145 (1-4) , 824-831
- https://doi.org/10.1016/0022-0248(94)91149-5
Abstract
No abstract availableKeywords
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