Growth condition dependence of GaN crystal structure on (0 0 1)GaAs by hydride vapor-phase epitaxy
- 1 June 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 189-190, 395-400
- https://doi.org/10.1016/s0022-0248(98)00322-4
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
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