High-density, inductively coupled plasma etch of sub half-micron critical layers: Transistor polysilicon gate definition and contact formation
- 1 September 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (5) , 2699-2706
- https://doi.org/10.1116/1.590260
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
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