Preparation of Thin Silicon-on-Insulator Films by Low-Energy Oxygen Ion Implantation
- 1 October 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (10R)
- https://doi.org/10.1143/jjap.30.2427
Abstract
Silicon-on-insulator (SOI) structures have been formed by oxygen implantation with the ion energy of 15-30 keV in silicon wafers. The ion implantation conditions which produce the SOI structure have been investigated both by calculation and experiments. As-implanted layers were analyzed by Auger electron spectroscopy and cross-sectional transmission electron microscopy. The thicknesses of the SOI layer and the buried amorphous SiO x layer are 48 and 61 nm, respectively, under the conditions at the O+ ion energy of 25 keV, with the dose of 2×1017 ion/cm2, and at about 450°C. The SOI layers are homogeneous and have sharp Si/SiO x interfaces.Keywords
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