Silicon carbide benefits and advantages for power electronics circuits and systems
Top Cited Papers
- 7 November 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 90 (6) , 969-986
- https://doi.org/10.1109/jproc.2002.1021562
Abstract
Silicon offers multiple advantages to power circuit designers, but at the same time suffers from limitations that are inherent to silicon material properties, such as low bandgap energy, low thermal conductivity, and switching frequency limitations. Wide bandgap semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), provide larger bandgaps, higher breakdown electric field, and higher thermal conductivity. Power semiconductor devices made with SiC and GaN are capable of higher blocking voltages, higher switching frequencies, and higher junction temperatures than silicon devices. SiC is by far the most advanced material and, hence, is the subject of attention from power electronics and systems designers. This paper looks at the benefits of using SiC in power electronics applications, reviews the current state of the art, and shows how SiC can be a strong and viable candidate for future power electronics and systems applications.Keywords
This publication has 67 references indexed in Scilit:
- Comparison of Si and SiC diodes during operationin three-phase inverter driving ac induction motorElectronics Letters, 2001
- SiC devices for advanced power and high-temperature applicationsIEEE Transactions on Industrial Electronics, 2001
- Review on materials, microsensors, systems and devices for high-temperature and harsh-environment applicationsIEEE Transactions on Industrial Electronics, 2001
- Design and technology of compact high-power convertersIEEE Aerospace and Electronic Systems Magazine, 2001
- The Hobetron-a high power vacuum electronic switchIEEE Transactions on Electron Devices, 2001
- MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet OxidationMaterials Science Forum, 2000
- Switching characteristics of silicon carbide power PiN diodesSolid-State Electronics, 2000
- Turn-on process in 4H-SiC thyristorsIEEE Transactions on Electron Devices, 1997
- Power electronics in electric utilities: static VAR compensatorsProceedings of the IEEE, 1988
- Power electronics in electric utilities: HVDC power transmission systemsProceedings of the IEEE, 1988